1n5614gp thru 1n5622gp document number 88520 14-oct-05 vishay general semiconductor www.vishay.com 1 do-204ac (do-15) p a t e n t e d * ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, and brazed-lead assembly by patent no. 3,930,306 glass passivated junction rectifier major ratings and characteristics i f(av) 1.0 a v rrm 200 v to 1000 v i fsm 50 a i r 0.5 a v f 1.2 v t j max. 175 c features superectifier struct ure for high reliability application cavity-free glass-passivated junction low forward voltage drop low leakage current, i r less than 0.1 a high forward surge capability meets environmental standard mil-s-19500 solder dip 260 c, 40 seconds typical applications for use in general purpose rectification of power sup- plies, inverters, converters and freewheeling diodes application mechanical data case: do-204ac, molded epoxy over glass body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 1n5614gp 1n5616gp 1n5618gp 1n5620gp 1n5622gp unit * maximum repetitive peak reverse voltage v rrm 200 400 600 800 1000 v maximum rms voltage v rms 140 280 420 560 700 v * maximum dc blocking voltage v dc 200 400 600 800 1000 v maximum average forward rectified current 0.375" (9.5 mm) lead length at t a = 55 c i f(av) 1.0 a * peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 50 a * operating junction temperature range t j - 65 to + 175 c * storage temperature range t stg - 65 to + 175 c
www.vishay.com 2 document number 88520 14-oct-05 1n5614gp thru 1n5622gp vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted *jedec registered values ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter te s t c o n d i t i o n symbol 1n5614gp 1n5616gp 1n5618gp 1n5620gp 1n5622gp unit * minimum reverse breakdown voltage at 50 a v br 220 440 660 880 1100 v * maximum instantaneous forward voltage at 1.0 a v f 1.2 v * maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 100 c i r 0.5 25 a * maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 2.0 s maximum junction capacitance at 12 v, 1 mhz c j 45 35 25 20 15 pf parameter symbol 1n5614gp 1n5616gp 1n5618gp 1n5620gp 1n522gp unit typical thermal resistance (1) r ja 45 c/w figure 1. forward current derating curve am b ient temperat u re, c a v erage for w ard rectified c u rrent (a) 0.375? (9.5 mm) lead length 60 hz resisti v e or ind u cti v e load 1.0 0.75 0.5 0.25 0 25 50 75 100 125 150 175 figure 2. maximum non-repetitive peak forward surge current t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1 10 100 50 40 30 20 10 0
1n5614gp thru 1n5622gp document number 88520 14-oct-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics t j = 150 c t j = 25 c p u lse w idth = 300 s 1% d u ty cycle 10 1 0.1 0.01 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0 20 40 60 8 0 100 0.01 0.1 1 10 t j = 125 c t j = 25 c t j = 75 c rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) figure 5. typical junction capacitance t j = 25 c f = 1.0 mhz v sig = 50m v p-p 30 10 1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) 0.034 (0.86) 0.028 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 0.230 (5.8) 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. do-204ac (do-15)
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